PART |
Description |
Maker |
AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm 3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC OPTEK Technologies
|
F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED http://
|
Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter Infrared LED GaA??s Infrared Emitter Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
MC68160A MC68160AFB |
MC68160A Enhanced Ethernet Transceiver ENHANCED ETHERNET INTERFACE TRANSCEIVER MC68160A Enhanced Ethernet Transceiver From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
LATBT66B-ST-1 LATBT66B |
Enhanced optical Power LED (HOP2000 / ATON?) Enhanced optical Power LED (HOP2000 / ATON㈢) Enhanced optical Power LED (HOP2000 / ATON?? Hyper Multi TOPLED? amber/ true gree...
|
N.A. OSRAM GmbH Infineon
|